Package-on-package semiconductor assembly having bottom device confined by dielectric recess

ABSTRACT

A package-on-package semiconductor assembly is characterized by a semiconductor device positioned in a dielectric recess of a core base and surrounded by an array of metal posts. The recess in the core provides lateral displacement control between the device and the metal posts, and the minimal height of the metal posts needed for the vertical connection between two both opposite sides of the core base can be reduced by the amount equal to the depth of the recess. Further, another semiconductor device is disposed over a top surface of the core base and is electrically coupled to the semiconductor device in the dielectric recess through a buildup circuitry under a bottom surface of the core base.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No.14/957,954 filed Dec. 3, 2015. This application also claims the benefitof filing date of U.S. Provisional Application Ser. No. 62/198,058 filedJul. 28, 2015. The entirety of each of said applications is incorporatedherein by reference.

FIELD OF THE INVENTION

The present invention relates to a package-on-package semiconductorassembly, more particularly, to a package-on-package semiconductorassembly having a bottom device confined by a recess of a dielectriclayer and surrounded by an array of metal posts.

DESCRIPTION OF RELATED ART

The convergence of mobility, communication, and computing has createdsignificant thermal, electrical and reliability challenges to thesemiconductor package industry. Despite numerous package-on-packageassemblies reported in the literature, many deficiencies remain. Forexample, the package-on-package assemblies disclosed in U.S. Pat. Nos.9,214,450, 8,916,481, 8,525,337 and 8,344,492 utilize through mold via,through-hole in interposer or stud bump respectively to form verticalchannels so as to electrically connect the top and bottom devices.However, with the advances of mobile modules, the number of I/Os thatneed to be connected between devices steadily increase. As a result,these vertical channel approaches present a crowding problem that cancause shorting between neighboring connections.

Another significant drawback arising from the fabrication of the aboveassemblies is that the embedded/bottom device may dislocate duringencapsulation or lamination. Incomplete metallization of micro-vias dueto device dislocation as described in U.S. Pat. No. 8,501,544 furtherdegrades the quality of the electrical connection, thereby lowering thereliability and production yield of the fabricated assembly.

For the reasons stated above, and for other reasons stated below, anurgent need exists to provide a new package-on-package semiconductorassembly that can address better signal integrity, high yield and lowcost requirements.

SUMMARY OF THE INVENTION

A primary objective of the present invention is to provide apackage-on-package semiconductor assembly having a bottom devicelaterally confined by a recess of a dielectric layer so that thedisplacement of the embedded bottom device can be controlled.

Another objective of the present invention is to provide apackage-on-package semiconductor assembly having an array of metal postsformed in a core base for vertical interconnection. As both the recessand the metal posts originated from a same metal carrier, thepre-determined relative location between the metal posts and theembedded bottom device can be guaranteed.

Yet another objective of the present invention is to provide apackage-on-package semiconductor assembly having both the recess and themetal posts enclosed in the core base. As the minimal height of themetal posts needed for the vertical connection between opposite sides ofthe core base can be compensated for by the amount equal to the depth ofthe recess, the manufacturing yield and cost can be greatly improved.

In accordance with the foregoing and other objectives, the presentinvention provides a package-on-package semiconductor assembly thatincludes a core base, a first semiconductor device, a bottom buildupcircuitry and a second semiconductor device. In a preferred embodiment,the core base includes a dielectric layer, a resin sealant layer and anarray of metal posts. The dielectric layer has a recess extending from atop surface of the dielectric layer. The resin sealant layer is disposedover the top surface of the dielectric layer. The first semiconductordevice is laterally confined by the recess of the dielectric layer andattached to a floor of the recess of the dielectric layer by anadhesive, with its contact pads facing the floor of the recess. Themetal posts are disposed over the top surface of the dielectric layerand laterally covered by the resin sealant layer. The bottom buildupcircuitry is disposed under a bottom surface of the core base andincludes metallized vias extending through the dielectric layer and iselectrically coupled to the active pads of the first semiconductordevice and the metal posts. The second semiconductor device is disposedover a top surface of the core base and electrically coupled to thefirst semiconductor device through the metal posts and the bottombuildup circuitry.

The package-on-package semiconductor assemblies according to the presentinvention have numerous advantages. For instance, inserting the firstsemiconductor device into the recess of the dielectric layer can reducethe minimal required height of the metal posts by the amount equal tothe depth of the recess of the dielectric layer. Forming the metal postsover the top surface of the dielectric layer can offer vertical routingto proceed with package-on-package interconnection procedure for thesecond semiconductor device disposed over the top surface of the corebase and electrically coupled to the first semiconductor device throughthe bottom buildup circuitry.

These and other features and advantages of the present invention will befurther described and more readily apparent from the detaileddescription of the preferred embodiments which follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The following detailed description of the preferred embodiments of thepresent invention can best be understood when read in conjunction withthe following drawings, in which:

FIG. 1 is a cross-sectional view of a sacrificial carrier in accordancewith the first embodiment of the present invention;

FIGS. 2 and 3 are cross-sectional and top perspective views,respectively, showing that a re-distribution layer is formed on thesacrificial carrier of FIG. 1 in accordance with the first embodiment ofthe present invention;

FIGS. 4 and 5 are cross-sectional and top perspective views,respectively, showing that semiconductor chips are mounted on thestructure of FIGS. 2 and 3 in accordance with the first embodiment ofthe present invention;

FIG. 6 is a cross-sectional view showing that the structure of FIG. 4 isprovided with a mold compound in accordance with the first embodiment ofthe present invention;

FIGS. 7 and 8 are cross-sectional and bottom perspective views,respectively, showing that the sacrificial carrier is removed from thestructure of FIG. 6 in accordance with the first embodiment of thepresent invention;

FIGS. 9 and 10 are cross-sectional and bottom perspective views,respectively, showing that the structure of FIGS. 7 and 8 is diced intoindividual pieces in accordance with the first embodiment of the presentinvention;

FIGS. 11 and 12 are cross-sectional and bottom perspective views,respectively, of a semiconductor device corresponding to a diced unit inFIGS. 9 and 10 in accordance with the first embodiment of the presentinvention;

FIGS. 13 and 14 are cross-sectional and bottom perspective views,respectively, showing that a protruded metal platform is formed on ametal carrier in accordance with the first embodiment of the presentinvention;

FIG. 15 is a cross-sectional view showing that the structure of FIG. 13is provided with a first dielectric layer in accordance with the firstembodiment of the present invention;

FIGS. 16 and 17 are cross-sectional and top perspective views,respectively, showing that a selected portion of the metal carrier isremoved from the structure of FIG. 15 in accordance with the firstembodiment of the present invention;

FIG. 18 is a cross-sectional view showing that the structure of FIG. 16is provided with a resin sealant layer in accordance with the firstembodiment of the present invention;

FIGS. 19 and 20 are cross-sectional and top perspective views,respectively, showing that the structure of FIG. 18 is provided with aplacement area in accordance with the first embodiment of the presentinvention;

FIG. 21 is a cross-sectional view showing that the structure of FIG. 19is provided with the semiconductor device of FIG. 11 in accordance withthe first embodiment of the present invention;

FIG. 22 is a cross-sectional view showing that the structure of FIG. 21is provided with a second dielectric layer in accordance with the firstembodiment of the present invention;

FIG. 23 is a cross-sectional view showing that the structure of FIG. 22is provided with first and second via openings in accordance with thefirst embodiment of the present invention;

FIG. 24 is a cross-sectional view showing that the structure of FIG. 23is provided with first and second conductive traces in accordance withthe first embodiment of the present invention;

FIG. 25 is a cross-sectional view showing that the structure of FIG. 24is provided with third and fourth dielectric layers in accordance withthe first embodiment of the present invention;

FIG. 26 is a cross-sectional view showing that the structure of FIG. 25is provided with third and fourth via openings in accordance with thefirst embodiment of the present invention;

FIG. 27 is a cross-sectional view showing that the structure of FIG. 26is provided with third and fourth conductive traces in accordance withthe first embodiment of the present invention;

FIG. 28 is a cross-sectional view showing that another semiconductordevice is mounted on the structure of FIG. 27 to finish the fabricationof a package-on-package semiconductor assembly in accordance with thefirst embodiment of the present invention;

FIG. 29 is a cross-sectional view showing that a protruded metalplatform and auxiliary metal pads are formed on a metal carrier inaccordance with the second embodiment of the present invention;

FIG. 30 is a cross-sectional view showing that the structure of FIG. 29is provided with a first dielectric layer in accordance with the secondembodiment of the present invention;

FIG. 31 is a cross-sectional view showing that the structure of FIG. 30is formed with a recess and metal posts in accordance with the secondembodiment of the present invention;

FIG. 32 is a cross-sectional view showing that the structure of FIG. 31is provided with the semiconductor device of FIG. 11 in accordance withthe second embodiment of the present invention;

FIG. 33 is a cross-sectional view showing that the structure of FIG. 32is provided with a resin sealant layer in accordance with the secondembodiment of the present invention;

FIG. 34 is a cross-sectional view showing that the structure of FIG. 33is provided with a second dielectric layer in accordance with the secondembodiment of the present invention;

FIG. 35 is a cross-sectional view showing that the structure of FIG. 34is provided with first and second via openings in accordance with thesecond embodiment of the present invention;

FIG. 36 is a cross-sectional view showing that the structure of FIG. 35is provided with first and second conductive traces in accordance withthe second embodiment of the present invention;

FIG. 37 is a cross-sectional view showing that the structure of FIG. 36is provided with third and fourth dielectric layers in accordance withthe second embodiment of the present invention;

FIG. 38 is a cross-sectional view showing that the structure of FIG. 37is provided with third and fourth via openings in accordance with thesecond embodiment of the present invention;

FIG. 39 is a cross-sectional view showing that the structure of FIG. 38is provided with third and fourth conductive traces in accordance withthe second embodiment of the present invention;

FIG. 40 is a cross-sectional view showing that another semiconductordevice is mounted on the structure of FIG. 39 to finish the fabricationof a package-on-package semiconductor assembly in accordance with thesecond embodiment of the present invention;

FIG. 41 is a cross-sectional view showing that metal posts are formed ona first dielectric layer in accordance with the third embodiment of thepresent invention;

FIG. 42 is a cross-sectional view showing that the structure of FIG. 41is provided with through-holes in accordance with the third embodimentof the present invention;

FIG. 43 is a cross-sectional view showing that the structure of FIG. 42is provided with the semiconductor device of FIG. 11 in accordance withthe third embodiment of the present invention;

FIG. 44 is a cross-sectional view showing that the structure of FIG. 43is provided with a resin sealant layer in accordance with the thirdembodiment of the present invention;

FIG. 45 is a cross-sectional view showing that the structure of FIG. 44is provided with a second dielectric layer in accordance with the thirdembodiment of the present invention;

FIG. 46 is a cross-sectional view showing that the structure of FIG. 45is provided with first and second via openings in accordance with thethird embodiment of the present invention;

FIG. 47 is a cross-sectional view showing that the structure of FIG. 46is provided with first and second conductive traces in accordance withthe third embodiment of the present invention;

FIG. 48 is a cross-sectional view showing that another semiconductordevice is mounted on the structure of FIG. 47 to finish the fabricationof a package-on-package semiconductor assembly in accordance with thethird embodiment of the present invention;

FIG. 49 is a cross-sectional view of another package-on-packagesemiconductor assembly in accordance with the fourth embodiment of thepresent invention; and

FIG. 50 is a cross-sectional view of yet another package-on-packagesemiconductor assembly in accordance with the fifth embodiment of thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereafter, examples will be provided to illustrate the embodiments ofthe present invention. Advantages and effects of the invention willbecome more apparent from the following description of the presentinvention. It should be noted that these accompanying figures aresimplified and illustrative. The quantity, shape and size of componentsshown in the figures may be modified according to practical conditions,and the arrangement of components may be more complex. Other variousaspects also may be practiced or applied in the invention, and variousmodifications and variations can be made without departing from thespirit of the invention based on various concepts and applications.

Embodiment 1

FIGS. 1-28 are schematic views showing a method of making apackage-on-package semiconductor assembly that includes a firstsemiconductor device, a core base, a top buildup circuitry, a bottombuildup circuitry and a second semiconductor device in accordance withthe first embodiment of the present invention.

FIG. 1 is a cross-sectional view of a sacrificial carrier 11. Thesacrificial carrier 11 can be made of any peelable or removablematerial, such as silicon, copper, aluminum, iron, nickel, tin or alloysthereof.

FIGS. 2 and 3 are cross-sectional and top perspective views,respectively, of the structure with a re-distribution layer 13 formed onthe sacrificial carrier 11. In this illustration, the re-distributionlayer 13 includes first routing traces 131, an insulating layer 133 andsecond routing traces 135. The first routing traces 131 extend laterallyon the sacrificial carrier 11. The insulating layer 133 contacts andcovers and extends laterally on the sacrificial carrier 11 and the firstrouting traces 131. The second routing traces 135 extend from the firstrouting traces 131 in the upward direction, extend through theinsulating layer 133, and extend laterally on the insulating layer 133.The insulating layer 133 can be formed of epoxy resin, glass-epoxy,polyimide, and the like, and typically has a thickness of 50 microns.

FIGS. 4 and 5 are cross-sectional and top perspective views,respectively, of the structure provided with semiconductor chips 15flip-chip mounted on the re-distribution layer 13. The semiconductorchips 15 are electrically coupled to the second routing traces 135 usingbumps 14 by thermal compression, solder reflow or thermosonic bonding.

FIG. 6 is a cross-sectional view of the structure provided with a moldcompound 17 on the re-distribution layer 13 and the semiconductor chips15. The mold compound 17 contacts and covers the re-distribution layer13 and the semiconductor chips 15 from above typically by molding, resincoating and resin lamination.

FIGS. 7 and 8 are cross-sectional and bottom perspective views,respectively, of the structure after removal of the sacrificial carrier11. The sacrificial carrier 11 can be removed to expose the firstrouting traces 131 by numerous techniques, such as wet chemical etchingusing acidic solution (e.g., ferric chloride, copper sulfate solutions),or alkaline solution (e.g., ammonia solution), electro-chemical etching,or mechanical process such as a drill or end mill followed by chemicaletching. As a result, the first routing traces 131 of there-distribution layer 13 are exposed from below and have an array ofactive pads 132 (as shown in FIG. 8) to provide electrical contacts forthe next level buildup circuitry interconnection.

FIGS. 9 and 10 are cross-sectional and bottom perspective views,respectively, of the panel-scale structure of FIGS. 7 and 8 diced intoindividual pieces. The panel-scale structure, having the semiconductorchips 15 on the re-distribution layer 13, is singulated into individualfirst semiconductor devices 10 along dicing lines “L”.

FIGS. 11 and 12 are cross-sectional and bottom perspective views,respectively, of an individual first semiconductor device 10 thatincludes a re-distribution layer 13, a semiconductor chip 15 and a moldcompound 17. The re-distribution layer 13 has active pads 132 at itsbottom surface, and the semiconductor chip 15 is electrically coupled tothe re-distribution layer 13 from above and surrounded by the moldcompound 17. In this illustration, the semiconductor chip 15 iselectrically coupled to the re-distribution layer 13 using bumps 14. Asan alternative, the first semiconductor device 10 may be fabricated byanother method and includes the semiconductor chip 15 electricallycoupled to the re-distribution layer 13 through micro-vias.

FIGS. 13 and 14 are cross-sectional and bottom perspective views,respectively, of the structure with a protruded metal platform 221formed on a metal carrier 21. The metal carrier 21 and the protrudedmetal platform 221 typically are made of copper, aluminum, nickel orother metals or alloys. The material of the protruded metal platform 221may be the same as or different from that of the metal carrier 21. Thethickness of the metal carrier 21 can range from 0.05 to 0.5 mm(preferably from 0.1 to 0.2 mm), whereas the thickness of the protrudedmetal platform 221 can range from 10 to 100 microns. In this embodiment,the metal carrier 21 is made of copper and has a thickness of 0.125 mm,whereas the protruded metal platform 221 is made of copper and hasthickness of 50 microns. The protruded metal platform 221 can be formedon the metal carrier 21 by pattern deposition, such as electroplating,electroless plating, evaporating, sputtering or their combinations, orby etching or mechanical carving.

FIG. 15 is a cross-sectional view of the structure with a firstdielectric layer 23 on the metal carrier 21 and the protruded metalplatform 221. The first dielectric layer 23 can be deposited bylamination or coating, and typically contains glass fiber. The firstdielectric layer 23 contacts and covers and extends laterally on themetal carrier 21 and the protruded metal platform 221 from below, andsurrounds and conformally coats sidewalls of the protruded metalplatform 221 in the lateral directions.

FIGS. 16 and 17 are cross-sectional and top perspective views,respectively, of the structure with a metal slug 211 and an array ofmetal posts 213 formed by removing a selected portion of the metalcarrier 21 using, for example, photolithography and wet etching. Themetal slug 211 covers the protruded metal platform 221 from above, andthe metal posts 213 are located on the top surface of the firstdielectric layer 23. At this stage, as the metal carrier 21 is etchedand segregated into the metal slug 211 and the metal posts 213, theintegrity of the entire structure is attributed to the mechanicalstrength of the first dielectric layer 23. Glass fiber contained in thefirst dielectric layer 23 can play an essential role in enhancing themechanical strength of the first dielectric layer 23 to avoid resincracking and warping.

FIG. 18 is a cross-sectional view of the structure with a resin sealantlayer 24 on the first dielectric layer 23. The resin sealant layer 24covers the first dielectric layer 23 from above and surrounds andconformally coats and covers sidewalls of the metal slug 211 and themetal posts 213 in the lateral directions. The resin sealant layer 24typically is five of glass fiber and has a thickness equal to that ofthe metal slug 211 and the metal posts 213. As a result, the resinsealant layer 24 is substantially coplanar with the metal slug 211 andthe metal posts 213 at top and bottom surfaces thereof.

FIGS. 19 and 20 are cross-sectional and top perspective views,respectively, of the structure after removal of the metal slug 211 andthe protruded metal platform 221. The metal slug 211 and the protrudedmetal platform 221 can be removed by numerous techniques, such as wetchemical etching, electro-chemical etching or laser. As a result, aplacement area 250 is formed and consists of a recess 230 and anaperture 240. The recess 230 in the first dielectric layer 23 has afloor 236 that is substantially parallel to the top and bottom surfacesof the first dielectric layer 23 and a periphery defining interiorsidewalls 238 that extend from the floor 236 to the top surface of thefirst dielectric layer 23. The aperture 240 has sidewalls 248 thatextend from the bottom surface to the top surface of the resin sealantlayer 24 and is aligned with the recess 230. In this illustration, therecess 230 and the aperture 240 have the same diameter, and thesidewalls 248 of the aperture 240 are flush with the sidewalls 238 ofthe recess 230.

FIG. 21 is a cross-sectional view of the structure with the firstsemiconductor device 10 of FIG. 11 placed in the placement area 250. Thefirst semiconductor device 10 is inserted into the placement area 250and attached to the floor 236 of the recess 230 by an adhesive 26, withthe active pads 132 in contact with the adhesive 26 and the moldcompound 17 substantially coplanar with the metal posts 213 and theresin sealant layer 24 at top surfaces thereof. The adhesive 26 contactsand is sandwiched between the re-distribution layer 13 of the firstsemiconductor device 10 and the floor 236 of the recess 230 to providemechanical bonds between the first semiconductor device 10 and the firstdielectric layer 23. The sidewalls 238 of the recess 230 and thesidewalls 248 of the aperture 240 are laterally aligned with and inclose proximity to peripheral edges of the first semiconductor device 10and confine the dislocation of the first semiconductor device 10laterally.

FIG. 22 is a cross-sectional view of the structure with a seconddielectric layer 321 laminated/coated on the first semiconductor device10, the metal posts 213 and the resin sealant layer 24 from above. Thesecond dielectric layer 321 contacts and covers and extends laterally onthe top surfaces of the first semiconductor device 10, the metal posts213 and the resin sealant layer 24. In this embodiment, the seconddielectric layer 321 typically has a thickness of 50 microns and can bemade of epoxy resin, glass-epoxy, polyimide, and the like.

FIG. 23 is a cross-sectional view of the structure provided with firstvia openings 233, 234 and second via openings 323. The first viaopenings 233 extend through the first dielectric layer 23 and theadhesive 26 and are aligned with and expose active pads 132 of the firstsemiconductor device 10 in the downward direction, whereas the first viaopenings 234 extend through the first dielectric layer 23 and arealigned with and expose selected portions of the metal posts 213 in thedownward direction. The second via openings 323 extend through thesecond dielectric layer 321 and are aligned with and expose selectedportions of the metal posts 213 in the upward direction. The first viaopenings 233, 234 and the second via openings 323 may be formed bynumerous techniques, such as laser drilling, plasma etching andphotolithography, and typically have a diameter of 50 microns. Laserdrilling can be enhanced by a pulsed laser. Alternatively, a scanninglaser beam with a metal mask can be used. For instance, copper can beetched first to create a metal window followed by laser.

Referring now to FIG. 24, first conductive traces 315 and secondconductive traces 325 are respectively formed on the first dielectriclayer 23 and the second dielectric layer 321 by metal deposition andmetal patterning process. The first conductive traces 315 extend fromthe bottom surface of the metal posts 213 and the active pads 132 of thefirst semiconductor device 10 in the downward direction, fill up thefirst via openings 233, 234 to form first metallized vias 317, 318 indirect contact with the active pads 132 of the first semiconductordevice 10 and the metal posts 213, respectively, and extend laterally onthe first dielectric layer 23. The second conductive traces 325 extendfrom the top surface of the metal posts 213 in the upward direction,fill up the second via openings 323 to form second metallized vias 327in direct contact with the metal posts 213, and extend laterally on thesecond dielectric layer 321. As a result, the first conductive traces315 and the second conductive traces 325 can provide horizontal signalrouting in both the X and Y directions and vertical routing through thefirst via openings 233, 234 and the second via openings 323 and serve aselectrical connections for the first semiconductor device 10 and themetal posts 213.

The first conductive traces 315 and the second conductive traces 325 canbe deposited as a single layer or multiple layers by any of numeroustechniques, such as electroplating, electroless plating, evaporating,sputtering, or their combinations. For instance, they can be depositedby first dipping the structure in an activator solution to render thefirst dielectric layer 23 and the second dielectric layer 321 catalyticto electroless copper, and then a thin copper layer is electrolesslyplated to serve as the seeding layer before a second copper layer iselectroplated on the seeding layer to a desirable thickness.Alternatively, the seeding layer can be formed by sputtering a thin filmsuch as titanium/copper before depositing the electroplated copper layeron the seeding layer. Once the desired thickness is achieved, the platedlayer can be patterned to form the first conductive traces 315 and thesecond conductive traces 325 by any of numerous techniques, such as wetetching, electro-chemical etching, laser-assist etching, and theircombinations, with an etch mask (not shown) thereon that defines thefirst conductive traces 315 and the second conductive traces 325.

FIG. 25 is a cross-sectional view of the structure with a thirddielectric layer 331 laminated/coated on the first dielectric layer 23and the first conductive traces 315 from below, and a fourth dielectriclayer 341 laminated/coated on the second dielectric layer 321 and thesecond conductive traces 325 from above. The third dielectric layer 331contacts and covers and extends laterally on the first dielectric layer23 and the first conductive traces 315 from below. The fourth dielectriclayer 341 contacts and covers and extends laterally on the seconddielectric layer 321 and the second conductive traces 325 from above.The third dielectric layer 331 and the fourth dielectric layer 341 canbe formed of epoxy resin, glass-epoxy, polyimide, and the like, andtypically has a thickness of 50 microns.

FIG. 26 is a cross-sectional view of the structure provided with thirdvia openings 333 and fourth via openings 343. The third via openings 333extend through the third dielectric layer 331 to expose selectedportions of the first conductive traces 315 in the downward direction.The fourth via openings 343 extend through the fourth dielectric layer341 to expose selected portions of the second conductive traces 325 inthe upward direction. Like the first via openings 233, 234 and thesecond via openings 323, the third via openings 333 and the fourth viaopenings 343 can be formed by any of numerous techniques, such as laserdrilling, plasma etching and photolithography and typically have adiameter of 50 microns.

FIG. 27 is a cross-sectional view of the structure provided with thirdconductive traces 335 and fourth conductive traces 345 on the thirddielectric layer 331 and the fourth dielectric layer 341 by metaldeposition and metal patterning process, respectively. The thirdconductive traces 335 extend from the first conductive traces 315 in thedownward direction, fill up the third via openings 333 to form thirdmetallized vias 337 in direct contact with the first conductive traces315, and extend laterally on the third dielectric layer 331. The fourthconductive traces 345 extend from the second conductive traces 325 inthe upward direction, fill up the fourth via openings 343 to form fourthmetallized vias 347 in direct contact with the second conductive traces325, and extend laterally on the fourth dielectric layer 341.

At this stage, a bottom buildup circuitry 310 and a top buildupcircuitry 320 are accomplished, and the top buildup circuitry 320 iselectrically coupled to the bottom buildup circuitry 310 through themetal posts 213.

FIG. 28 is a cross-sectional view of the structure provided with asecond semiconductor device 40 mounted on the fourth conductive traces345. The second semiconductor device 40 is mounted on the top buildupcircuitry 320 via solder balls 51 in contact with the fourth conductivetraces 345 and the second semiconductor device 40.

Accordingly, as shown in FIG. 28, a package-on-package semiconductorassembly 100 is accomplished and includes a first semiconductor device10, a core base 20, a bottom buildup circuitry 310, a top buildupcircuitry 320, and a second semiconductor device 40. In thisillustration, the first semiconductor device 10 includes are-distribution layer 13, a semiconductor chip 15 and a mold compound17; the core base 20 includes an array of metal posts 213, a firstdielectric layer 23 and a resin sealant layer 24; the bottom buildupcircuitry 310 includes first conductive traces 315, a third dielectriclayer 331 and third conductive traces 335; and the top buildup circuitry320 includes a second dielectric layer 321, second conductive traces325, a fourth dielectric layer 341 and fourth conductive traces 345.

The first semiconductor device 10 is face-down disposed in a recess 230of the first dielectric layer 23 and protrudes out from the recess 230and extends through an aperture 240 of the resin sealant layer 24, withits mold compound 17 being substantially coplanar with the metal posts213 and the resin sealant layer 24 at the top surfaces thereof. The gapbetween the first semiconductor device 10 and the sidewalls 238, 248 ofthe recess 230 and the aperture 240 ranges from 5 to 50 microns. Assuch, the placement accuracy of the first semiconductor device 10 can beprovided by the sidewalls 238 of the recess 230 and the sidewalls 248 ofthe aperture 240, with the sidewalls 238 of the recess 230 extendingbeyond the bottom surface of the first semiconductor device 10 in theupward direction. The bottom buildup circuitry 310 is disposed on thebottom surface of the core base 20 and is electrically coupled to theactive pads 132 of the first semiconductor device 10 through its firstmetallized vias 317 that extend through the adhesive 26 and the firstdielectric layer 23 and is further electrically coupled to the metalposts 213 of the core base 20 through its additional first metallizedvias 318 that extend through the first dielectric layer 23. The topbuildup circuitry 320 is disposed on the top surfaces of the firstsemiconductor device 10 and the core base 20 and is electrically coupledto the metal posts 213 of the core base 20 through its second metallizedvias 327. The second semiconductor device 40 is disposed over the topbuildup circuitry 320 and electrically coupled to the firstsemiconductor device 10 through the top buildup circuitry 320, the metalposts 213 and the bottom buildup circuitry 310.

Embodiment 2

FIGS. 29-40 are schematic views showing a method of making apackage-on-package semiconductor assembly with auxiliary metal padsunderneath the metal posts in accordance with the second embodiment ofthe present invention.

For purposes of brevity, any description in Embodiment 1 above isincorporated herein insofar as the same is applicable, and the samedescription need not be repeated.

FIG. 29 is a cross-sectional view of the structure with a protrudedmetal platform 221 and an array of auxiliary metal pads 223 formed on ametal carrier 21. The protruded metal platform 221 and the auxiliarymetal pads 223 extend from the bottom surface of the metal carrier 21 inthe downward direction. In this illustration, the auxiliary metal pads223 are substantially coplanar with the protruded metal platform 221 attheir top and bottom surfaces. The auxiliary metal pads 223 can be madeof the same material as the protruded metal platform 221, and may beformed by pattern deposition, such as electroplating, electrolessplating, evaporating, sputtering or their combinations, or by etching ormechanical carving.

FIG. 30 is a cross-sectional view of the structure with a firstdielectric layer 23 on the metal carrier 21, the protruded metalplatform 221 and the auxiliary metal pads 223. The first dielectriclayer 23 contacts and covers the metal carrier 21, the protruded metalplatform 221 and the auxiliary metal pads 223 from below, and surroundsand conformally coats sidewalls of the protruded metal platform 221 andthe auxiliary metal pads 223 in the lateral directions.

FIG. 31 is a cross-sectional view of the structure with a recess 230 andan array of metal posts 213 formed by removing a selected portion of themetal carrier 21 and the protruded metal platform 221. The metal posts213 are aligned with and contact and cover the auxiliary metal pads 223in the upward direction. The diameter of the metal post 213 at itsbottom surface may be the same as or different from that of theauxiliary metal pad 223 at its top surface. Further, the recess 230 hasa depth substantially equal to the thickness of the auxiliary metal pads223.

FIG. 32 is a cross-sectional view of the structure with the firstsemiconductor device 10 of FIG. 11 placed in the recess 230 of the firstdielectric layer 23. The first semiconductor device 10 is inserted intothe recess 230 and attached to the first dielectric layer 23 by anadhesive 26, with the re-distribution layer 13 in contact with theadhesive 26 and the mold compound 17 substantially coplanar with themetal posts 213 at top surfaces thereof.

FIG. 33 is a cross-sectional view of the structure with a resin sealantlayer 24 on the first dielectric layer 23. The resin sealant layer 24covers the first dielectric layer 23 from above and surrounds andconformally coats and covers sidewalls of the first semiconductor device10 and the metal posts 213 in the lateral directions. The resin sealantlayer 24 is substantially coplanar with the first semiconductor device10 and the metal posts 213 at top surfaces thereof.

FIG. 34 is a cross-sectional view of the structure with a seconddielectric layer 321 laminated/coated on the first semiconductor device10, the metal posts 213 and the resin sealant layer 24 from above. Thesecond dielectric layer 321 contacts and covers the top surfaces offirst semiconductor device 10, the metal posts 213 and the resin sealantlayer 24.

FIG. 35 is a cross-sectional view of the structure provided with firstvia openings 233, 234 and second via openings 323. The first viaopenings 233 extend through the first dielectric layer 23 and theadhesive 26 and are aligned with and expose the active pads 132 of thefirst semiconductor device 10 in the downward direction, whereas thefirst via openings 234 extend through the first dielectric layer 23 andare aligned with and expose selected portions of the auxiliary metalpads 223 in the downward direction. The second via openings 323 extendthrough the second dielectric layer 321 and are aligned with and exposeselected portions of the metal posts 213 in the upward direction.

Referring now to FIG. 36, first conductive traces 315 and secondconductive traces 325 are respectively formed on the first dielectriclayer 23 and the second dielectric layer 321 by metal deposition andmetal patterning process. The first conductive traces 315 extend fromthe active pads 132 and the auxiliary metal pads 223 in the downwarddirection, fill up the first via openings 233, 234 to form firstmetallized vias 317, 318, and extend laterally on the first dielectriclayer 23. The second conductive traces 325 extend from the metal posts213 in the upward direction, fill up the second via openings 323 to formsecond metallized vias 327, and extend laterally on the seconddielectric layer 321.

FIG. 37 is a cross-sectional view of the structure with a thirddielectric layer 331 laminated/coated on the first dielectric layer 23and the first conductive traces 315 from below, and a fourth dielectriclayer 341 laminated/coated on the second dielectric layer 321 and thesecond conductive traces 325 from above. The third dielectric layer 331contacts and covers and extends laterally on the first dielectric layer23 and the first conductive traces 315 from below. The fourth dielectriclayer 341 contacts and covers and extends laterally on the seconddielectric layer 321 and the second conductive traces 325 from above.

FIG. 38 is a cross-sectional view of the structure provided with thirdvia openings 333 and fourth via openings 343. The third via openings 333extend through the third dielectric layer 331 to expose selectedportions of the first conductive traces 315 in the downward direction.The fourth via openings 343 extend through the fourth dielectric layer341 to expose selected portions of the second conductive traces 325 inthe upward direction.

FIG. 39 is a cross-sectional view of the structure provided with thirdconductive traces 335 on the third dielectric layer 331 and fourthconductive traces 345 on the fourth dielectric layer 341 by metaldeposition and metal patterning process. The third conductive traces 335extend from the first conductive traces 315 in the downward direction,fill up the third via openings 333 to form third metallized vias 337 indirect contact with the first conductive traces 315, and extendlaterally on the third dielectric layer 331. The fourth conductivetraces 345 extend from the second conductive traces 325 in the upwarddirection, fill up the fourth via openings 343 to form fourth metallizedvias 347 in direct contact with the second conductive traces 325, andextend laterally on the fourth dielectric layer 341.

FIG. 40 is a cross-sectional view of the structure provided with asecond semiconductor device 40 mounted on the fourth conductive traces345. The second semiconductor device 40 is electrically coupled to thefirst semiconductor device 10 via solder balls 51 in contact with thefourth conductive traces 345 and the second semiconductor device 40.

Accordingly, as shown in FIG. 40, a package-on-package semiconductorassembly 200 is accomplished and includes a first semiconductor device10, a core base 20, a bottom buildup circuitry 310, a top buildupcircuitry 320 and a second semiconductor device 40. In thisillustration, the first semiconductor device 10 includes are-distribution layer 13, a semiconductor chip 15 and a mold compound17; the core base 20 includes an array of metal posts 213, an array ofauxiliary metal pads 223, a first dielectric layer 23 and a resinsealant layer 24; the bottom buildup circuitry 310 includes firstconductive traces 315, a third dielectric layer 331 and third conductivetraces 335; and the top buildup circuitry 320 includes a seconddielectric layer 321, second conductive traces 325, a fourth dielectriclayer 341 and fourth conductive traces 345.

The first semiconductor device 10 extends through an aperture 240 of theresin sealant layer 24 and into a recess 230 of the first dielectriclayer 23. The protrusion height of the first semiconductor device 10 outof the recess 230 is substantially equal to the thickness of the metalposts 213 and the resin sealant layer 24, whereas the depth of therecess 230 is substantially equal to the thickness of the auxiliarymetal pads 223. The bottom buildup circuitry 310 is electrically coupledto the active pads 132 of the first semiconductor device 10 and themetal posts 213 and provides a fan-out routing for the firstsemiconductor device 10. The top buildup circuitry 320 is electricallycoupled to the bottom buildup circuitry 310 through the metal posts 213and the auxiliary metal pads 223 of the core base 20, and provideselectrical contacts for the second semiconductor device 40.

Embodiment 3

FIGS. 41-48 are schematic views showing a method of making apackage-on-package semiconductor assembly in which the firstsemiconductor device 10 includes protruded bumps 18 extending throughthe first dielectric layer 23 in accordance with the third embodiment ofthe present invention.

For purposes of brevity, any description in aforementioned Embodimentsabove is incorporated herein insofar as the same is applicable, and thesame description need not be repeated.

FIG. 41 is a cross-sectional view of the structure with an array ofmetal posts 213 on a first dielectric layer 23. This structure can befabricated by removing selected portions of the metal carrier 21 and theprotruded metal platform 221 illustrated in FIG. 13. As a result, thefirst dielectric layer 23 has a recess 230 that extends from a topsurface thereof, and the metal posts 213 are positioned beyond therecess 230.

FIG. 42 is a cross-sectional view of the structure provided with anarray of through-holes 231 in the first dielectric layer 23. Thethrough-holes 231 are aligned with the recess 230 and extend through thefirst dielectric layer 23.

FIG. 43 is a cross-sectional view of the structure with a firstsemiconductor device 10 placed in the recess 230 of the first dielectriclayer 23. In this embodiment, the first semiconductor device 10 issimilar to that illustrated in FIG. 11, except that the firstsemiconductor device 10 further includes protruded bumps 18 on theactive pads 132 of the re-distribution layer 13. The protruded bumps 18can be copper, solder or gold pillars or other conductive bumps. Thefirst semiconductor device 10 is attached to the first dielectric layer23 at the recess 230 by an adhesive 26, with the protruded bumps 18being inserted into and exposed from the through-holes 231 and the moldcompound 17 being substantially coplanar with the metal posts 213 at topsurfaces thereof.

FIG. 44 is a cross-sectional view of the structure with a resin sealantlayer 24 on the first dielectric layer 23. The resin sealant layer 24covers the first dielectric layer 23 from above and surrounds andconformally coats and covers sidewalls of the first semiconductor device10 and the metal posts 213 in the lateral directions. The resin sealantlayer 24 is substantially coplanar with the first semiconductor device10 and the metal posts 213 at top surfaces thereof.

FIG. 45 is a cross-sectional view of the structure with a seconddielectric layer 321 laminated/coated on the first semiconductor device10, the metal posts 213 and the resin sealant layer 24 from above. Thesecond dielectric layer 321 contacts and covers the top surfaces of thefirst semiconductor device 10, the metal posts 213 and the resin sealantlayer 24.

FIG. 46 is a cross-sectional view of the structure provided with firstvia openings 234 and second via openings 323. The first via openings 234extend through the first dielectric layer 23 and are aligned with andexpose the metal posts 213 in the downward direction. The second viaopenings 323 extend through the second dielectric layer 321 and arealigned with and expose selected portions of the metal posts 213 in theupward direction.

Referring now to FIG. 47, first conductive traces 315 and secondconductive traces 325 are respectively formed on the first dielectriclayer 23 and the second dielectric layer 321 by metal deposition andmetal patterning process. The first conductive traces 315 extend fromthe protruded bumps 18 of the first semiconductor device 10 and themetal posts 213 in the downward direction, fill up the first viaopenings 234 to form first metallized vias 318 in direct contact withthe metal posts 213, and extend laterally on the first dielectric layer23. The second conductive traces 325 extend from the metal posts 213 inthe upward direction, fill up the second via openings 323 to form secondmetallized vias 327 in direct contact with the metal posts 213, andextend laterally on the second dielectric layer 321.

FIG. 48 is a cross-sectional view of the structure provided with asecond semiconductor device 40 mounted on the second conductive traces325. The second semiconductor device 40 is electrically coupled to thefirst semiconductor device 10 via solder balls 51 in contact with thesecond conductive traces 325 and the second semiconductor device 40.

Accordingly, as shown in FIG. 48, a package-on-package semiconductorassembly 300 is accomplished and includes a first semiconductor device10, a core base 20, a bottom buildup circuitry 310, a top buildupcircuitry 320 and a second semiconductor device 40. In thisillustration, the first semiconductor device 10 includes are-distribution layer 13, a semiconductor chip 15, a mold compound 17and protruded bumps 18; the core base 20 includes an array of metalposts 213, a first dielectric layer 23 and a resin sealant layer 24; thebottom buildup circuitry 310 includes first conductive traces 315; andthe top buildup circuitry 320 includes a second dielectric layer 321 andsecond conductive traces 325.

The first semiconductor device 10 is face-down disposed in the recess230 of the first dielectric layer 23, with the sidewalls of the recess230 in close proximity to peripheral edges of the first semiconductordevice 10 and the protruded bumps 18 of the first semiconductor device10 inserted into the through-holes 231. The bottom and top buildupcircuitries 310, 320 are electrically connected to each other by themetal posts 213 of the core base 20. As a result, the secondsemiconductor device 40 mounted on the top buildup circuitry 320 can beelectrically coupled to the first semiconductor device 10 embedded inthe core base 20 through the top buildup circuitry 320, the metal posts213 and the bottom buildup circuitry 310.

Embodiment 4

FIG. 49 is a cross-sectional view of another package-on-packagesemiconductor assembly in which no top buildup circuitry is formed andthe resin sealant layer further covers the top surfaces of the firstsemiconductor device and the metal posts in accordance with the fourthembodiment of the present invention.

In this embodiment, the package-on-package semiconductor assembly 400 issimilar to that illustrated in Embodiment 1, except that (i) the resinsealant layer 24 has a larger thickness than that of the metal posts 213and includes openings to expose the top surface of the metal posts 213,(ii) no top buildup circuitry is formed over the top surfaces of thefirst semiconductor device 10 and the core base 20, and (iii) the secondsemiconductor device 40 is mounted on the top surface of the metal posts213 via solder balls 51 that extend into the openings of the resinsealant layer 24 and are in contact with the metal posts 213. As aresult, the second semiconductor device 40 is electrically coupled tothe first semiconductor device 10 through the metal posts 213 and thebottom buildup circuitry 310.

Embodiment 5

FIG. 50 is a cross-sectional view of yet another package-on-packagesemiconductor assembly in which no top buildup circuitry is formed andthe first semiconductor device 10 and the metal posts 213 protrude outfrom the resin sealant layer 24 in accordance with the fifth embodimentof the present invention.

In this embodiment, the package-on-package semiconductor assembly 500 issimilar to that illustrated in Embodiment 3, except that (i) the metalposts 213 have a larger thickness than that of the resin sealant layer24, (ii) no top buildup circuitry is formed over the top surfaces of thefirst semiconductor device 10 and the core base 20, and (iii) the secondsemiconductor device 40 is mounted on the top surface of the metal posts213 via solder balls 51 in contact with the protruded portion of themetal posts 213. As a result, the second semiconductor device 40 iselectrically coupled to the first semiconductor device 10 through themetal posts 213 and the bottom buildup circuitry 310.

The package-on-package semiconductor assemblies described above aremerely exemplary. Numerous other embodiments are contemplated. Inaddition, the embodiments described above can be mixed-and-matched withone another and with other embodiments depending on design andreliability considerations. For instance, the first dielectric layer mayinclude multiple recesses arranged in an array and each recessaccommodates a first semiconductor device therein. Also, the bottombuildup circuitry can include additional conductive traces to receiveand route additional active pads of additional first semiconductordevices.

As illustrated in the aforementioned embodiments, a distinctivepackage-on-package semiconductor assembly is configured and includes acore base, a first semiconductor device, a bottom buildup circuitry anda second semiconductor device, wherein the first semiconductor device isaccommodated in the core base and electrically coupled to the bottombuildup circuitry disposed under a bottom surface of the core base, andthe core base provides vertical routing to proceed withpackage-on-package interconnection procedure for the secondsemiconductor device disposed over a top surface of the core base andelectrically coupled to the first semiconductor device through thebottom buildup circuitry.

In a preferred embodiment, the core base includes a dielectric layer, aresin sealant layer, a recess in the dielectric layer, and an array ofmetal posts in the resin sealant layer. The first semiconductor devicecan be packaged in the core base and electrically coupled to the bottombuildup circuitry by the steps of: forming a protruded metal platform ona bottom surface of a metal carrier; forming a dielectric layer coveringthe protruded metal platform and the bottom surface of the metalcarrier; forming an array of metal posts over a top surface of thedielectric layer by removing a portion of the metal carrier; forming arecess in the dielectric layer by removing the protruded metal platform;attaching a first semiconductor device in the recess of the dielectriclayer by an adhesive, wherein the first semiconductor device extendsinto the recess of the dielectric layer and is laterally covered by aresin sealant layer disposed over the top surface of the dielectriclayer and has active pads at its bottom surface; and forming a bottombuildup circuitry under a bottom surface of the dielectric layer,wherein the bottom buildup circuitry is electrically coupled to theactive pads of the first semiconductor device and the metal posts.Accordingly, the core base can serve as a flat platform and providevertical routing for the next package-on-package interconnection, andthe package-on-package semiconductor assembly can be accomplished by astep of electrically coupling a second semiconductor device to the metalposts. Specifically, the second semiconductor device is disposed over atop surface of the core base and is electrically coupled to the firstsemiconductor device through the metal posts and the bottom buildupcircuitry.

Unless specifically indicated or using the term “then” between steps, orsteps necessarily occurring in a certain order, the sequence of theabove-mentioned steps is not limited to that set forth above and may bechanged or reordered according to desired design.

The first semiconductor device can be a packaged or unpackaged chip. Forinstance, the first semiconductor device may be a packaged chip that canbe fabricated by a pane scale process followed by a singulation processand includes a semiconductor chip, a re-distribution layer and a moldcompound. The re-distribution layer has active pads at its bottomsurface for interconnection with the bottom buildup circuitry, and thesemiconductor chip is disposed over a top surface of the re-distributionlayer and electrically coupled to the active pads of the re-distributionlayer and surrounded by the mold compound. In a preferred embodiment,the first semiconductor device can be fabricated by steps of: forming are-distribution layer on a sacrificial carrier; electrically coupling asemiconductor chip to the re-distribution layer; forming a mold compoundthat covers the re-distribution layer and the semiconductor chip; andremoving the sacrificial carrier. Additionally, the first semiconductordevice may further include protruded bumps on the active pads.

The dielectric layer of the core base preferably contains glass fiberand has a recess to accommodate the first semiconductor device. Therecess of the dielectric layer has a floor and sidewalls that extendfrom the floor to the top surface of the dielectric layer. The sidewallsof the recess of the dielectric layer are laterally aligned with and inclose proximity to the peripheral edges of the first semiconductordevice. As the sidewalls of the recess extend from the floor of therecess and extend beyond the bottom surface of the first semiconductordevice, the sidewalls of the recess can confine the dislocation of thefirst semiconductor device laterally and provide the placement accuracyof the first semiconductor device in the recess. Further, in the case ofthe first semiconductor device having protruded bumps thereon, thedielectric layer further has an array of through-holes extending throughthe dielectric layer at the floor of the recess so as to permit theprotruded bumps of the first semiconductor device to extend through andbe exposed from the through-holes of the dielectric layer.

The resin sealant layer can be free of glass fiber, and may be formedbefore or after the step of attaching the first semiconductor device inthe recess of the dielectric layer. For instance, after removing aselected portion of the metal carrier to from metal posts and a metalslug that covers the protruded metal platform, the resin sealant layercan be provided to cover sidewalls of the metal slug and the metalposts, followed by removing the metal slug and the protruded metalplatform to form an aperture in the resin sealant and a recess in thedielectric layer. As a result, the first semiconductor device can beinserted through the aperture of the resin sealant layer and into therecess of the dielectric layer, and be retained at a predeterminedlocation using the sidewalls of the recess as a dislocation controller.Alternatively, the resin sealant layer may be provided to coversidewalls of the first semiconductor device and the metal posts afterthe step of attaching the first semiconductor device in the recess ofthe dielectric layer. Further, the resin sealant layer may have a topsurface substantially coplanar with or lower than that of the metalposts so as to expose the top surface of the metal posts, or may furthercover the top surface of the metal posts and have openings to expose thetop surface of the metal posts.

The metal posts in the resin sealant layer can provide verticalelectrical connections between both opposite sides of the core base. Ina preferred embodiment, the metal posts have a thickness smaller thanthe total thickness of the first semiconductor device and substantiallyequal to the protrusion height of the first semiconductor device out ofthe recess, and are electrically coupled to the bottom buildup circuitrythrough metallized vias that extend into the dielectric layer from thebottom surface of the core base.

The core base may further include an array of auxiliary metal padslaterally covered by the dielectric layer and electrically to anddisposed between the metal posts and the metallized vias of the bottombuildup circuitry. The auxiliary metal pads can be simultaneouslydeposited on the bottom surface of the metal carrier while forming theprotruded metal platform, followed by forming the metal posts in contactwith the top surface of the auxiliary metal pads. In a preferredembodiment, the auxiliary metal pads are substantially coplanar with theprotruded metal platform at top and bottom surfaces thereof, and have athickness substantially equal to the depth of the recess of thedielectric layer. Further, the diameter of the auxiliary metal pad atits top surface may be the same as or different from that of the metalpost at its bottom surface.

The bottom buildup circuitry is formed under the bottom surface of thecore base and provides electrical connections between the firstsemiconductor device and the metal posts of the core base. Specifically,the bottom buildup circuitry can include conductive traces that directlycontact and extend from the active pads or the protruded bumps of thefirst semiconductor device as well as the metal posts or the auxiliarymetal pads of the core base, and fill up via openings that extendthrough the dielectric layer and additional via openings that extendthrough the dielectric layer and the adhesive to form bottom metallizedvias, and laterally extend on the bottom surface of the dielectriclayer. Accordingly, the electrical connection between the firstsemiconductor device and the bottom buildup circuitry and between thecore base and the bottom buildup circuitry can be devoid of solderingmaterial. Optionally, a top buildup circuitry may be further formed overthe top surface of the core base and between the core base and thesecond semiconductor device, and is electrically coupled to the bottombuildup circuitry through the metal posts and the optional auxiliarymetal pads. Specifically, the top buildup circuitry can include a topdielectric layer over the top surfaces of the first semiconductor deviceand the core base and conductive traces that directly contact and extendfrom the metal posts of the core base and fill up via openings in thetop dielectric layer to form top metallized vias and laterally extend onthe top dielectric layer. As a result, the top buildup circuitry iselectrically coupled to the metal posts and provides electrical contactsfor the second semiconductor device.

The top and bottom buildup circuitries can further include additionaldielectric layers, additional via openings, and additional conductivetraces if needed for further signal routing. The outmost conductivetraces of the top and bottom buildup circuitries can respectivelyaccommodate conductive joints, such as solder balls, for electricalcommunication and mechanical attachment with another electronic device.For instance, the second semiconductor device can be mounted on the topbuildup circuitry using conductive joints on the outmost conductivetraces of the top buildup circuitry to form the package-on-packagesemiconductor assembly. The second semiconductor device can be apackaged or unpackaged chip. For instance, the second semiconductordevice can be a bare chip, or a wafer level packaged die, etc.

The term “cover” refers to incomplete or complete coverage in a verticaland/or lateral direction. For instance, in the recess-up position, thedielectric layer covers the first semiconductor device in the downwarddirection regardless of whether another element such as the adhesive isbetween the dielectric layer and the first semiconductor device.

The phrase “aligned with” refers to relative position between elementsregardless of whether elements are spaced from or adjacent to oneanother or one element is inserted into and extends into the otherelement. For instance, the sidewalls of the recess of the dielectriclayer are laterally aligned with the first semiconductor device since animaginary horizontal line intersects the sidewalls of the recess of thedielectric layer and the first semiconductor device, regardless ofwhether another element is between the sidewalls of the recess of thedielectric layer and the first semiconductor device and is intersectedby the line, and regardless of whether another imaginary horizontal lineintersects the first semiconductor device but not the sidewalls of therecess of the dielectric layer or intersects the sidewalls of the recessof the dielectric layer but not the first semiconductor device.Likewise, the via openings are aligned with the active pads of the firstsemiconductor device.

The phrase “in close proximity to” refers to a gap between elements notbeing wider than the maximum acceptable limit. As known in the art, whenthe gap between the sidewalls of the recess of the dielectric layer andthe first semiconductor device is not narrow enough, the location errorof the first semiconductor device due to the lateral displacement of thefirst semiconductor device within the gap may exceed the maximumacceptable error limit. In some cases, once the location error of thefirst semiconductor device goes beyond the maximum limit, it isimpossible to align the predetermined portion of the first semiconductordevice with a laser beam, resulting in the electrical connection failurebetween the first semiconductor device and the buildup circuitry.According to the active pad size of the first semiconductor device,those skilled in the art can ascertain the maximum acceptable limit fora gap between the first semiconductor device and the sidewalls of therecess of the dielectric layer through trial and error to ensure themetallized vias being aligned with the active pads of the firstsemiconductor device. Thereby, the description “the sidewalls of therecess of the dielectric layer are in close proximity to the peripheraledges of the first semiconductor device” means that the gap between theperipheral edges of the first semiconductor device and the sidewalls ofthe recess of the dielectric layer is narrow enough to prevent thelocation error of the first semiconductor device from exceeding themaximum acceptable error limit. For instance, the gaps in between thefirst semiconductor device and the sidewalls of the recess of thedielectric layer may be in a range of about 5 to 50 microns.

The phrases “electrical connection”, “electrically connected” and“electrically coupled” refer to direct and indirect electricalconnection. For instance, the conductive traces of the bottom buildupcircuitry directly contact and are electrically connected to the activepads or the protruded bumps of the first semiconductor device, whereasthe conductive traces of the top buildup circuitry are spaced from andelectrically connected to the active pads of the first semiconductordevice by the conductive traces of the top buildup circuitry and themetal posts of the core base.

The package-on-package semiconductor assembly according to the presentinvention has numerous advantages. For instance, the bottom buildupcircuitry can provide signal routing with simple circuitry patterns orflexible multi-layer signal routing with complex circuitry patterns forthe first and second semiconductor devices. The minimal height of themetal posts can be reduced by the amount equal to the depth of therecess such that a higher number of metal posts can be disposed. Thesidewalls of the recess can provide critical placement accuracy for thefirst semiconductor device. The direct electrical connection between thefirst semiconductor device and the bottom buildup circuitry isadvantageous to high I/O and high performance. The package-on-packagesemiconductor assembly made by this method is reliable, inexpensive andwell-suited for high volume manufacture.

The manufacturing process is highly versatile and permits a wide varietyof mature electrical and mechanical connection technologies to be usedin a unique and improved manner. The manufacturing process can also beperformed without expensive tooling. As a result, the manufacturingprocess significantly enhances throughput, yield, performance and costeffectiveness compared to conventional techniques.

The embodiments described herein are exemplary and may simplify or omitelements or steps well-known to those skilled in the art to preventobscuring the present invention. Likewise, the drawings may omitduplicative or unnecessary elements and reference labels to improveclarity.

What is claimed is:
 1. A package-on-package semiconductor assembly,comprising: a core base that includes a dielectric layer, a resinsealant layer and an array of metal posts, wherein (i) the dielectriclayer has a recess extending from a top surface of the dielectric layer,(ii) the resin sealant layer is disposed over the top surface of thedielectric layer, and (iii) the metal posts are disposed in the resinsealant layer; a first semiconductor device that includes asemiconductor chip, a re-distribution layer and a mold compound, there-distribution layer having active pads at a bottom surface thereof andthe semiconductor chip being disposed over a top surface of there-distribution layer and electrically coupled to the active pads of there-distribution layer and surrounded by the mold compound, wherein thefirst semiconductor device is laterally confined within the recess ofthe dielectric layer and with the active pads of the re-distributionlayer attached to a floor of the recess of the dielectric layer by anadhesive; a bottom buildup circuitry under a bottom surface of the corebase, wherein the bottom buildup circuitry is electrically coupled tothe active pads of the re-distribution layer of the first semiconductordevice through metallized vias that extend through the adhesive and thedielectric layer and is further electrically coupled to the metal poststhrough additional metallized vias that extend through the dielectriclayer; and a second semiconductor device over a top surface of the corebase, wherein the second semiconductor device is electrically coupled tothe first semiconductor device through the metal posts and the bottombuildup circuitry.
 2. The package-on-package semiconductor assembly ofclaim 1, wherein the dielectric layer contains glass fiber whereas theresin sealant layer is free of glass fiber.
 3. The package-on-packagesemiconductor assembly of claim 1, further comprising a top buildupcircuitry over the top surface of the core base and between the corebase and the second semiconductor device, wherein the secondsemiconductor device is electrically coupled to the top buildupcircuitry, and the top buildup circuitry is electrically coupled to thefirst semiconductor device through the metal posts and the bottombuildup circuitry.
 4. The package-on-package semiconductor assembly ofclaim 1, wherein the core base further includes an array of auxiliarymetal pads laterally covered by the dielectric layer and electricallycoupled to and disposed between the metal posts and the additionalmetallized vias of the bottom buildup circuitry.
 5. Thepackage-on-package semiconductor assembly of claim 4, wherein theauxiliary metal pads have a thickness substantially equal to a depth ofthe recess of the dielectric layer.
 6. A package-on-packagesemiconductor assembly, comprising: a core base that includes adielectric layer, a resin sealant layer, and an array of metal posts,wherein (i) the dielectric layer has a recess extending from a topsurface of the dielectric layer and an array of through-holes extendingthrough the dielectric layer at a floor of the recess, (ii) the resinsealant layer is disposed over the top surface of the dielectric layer,and (iii) the metal posts are disposed in the resin sealant layer; afirst semiconductor device that includes a semiconductor chip, are-distribution layer and a mold compound, the re-distribution layerhaving active pads at a bottom surface thereof and the semiconductorchip being disposed over a top surface of the re-distribution layer andelectrically coupled to the active pads of the re-distribution layer andsurrounded by the mold compound, wherein the first semiconductor deviceis laterally confined within the recess of the dielectric layer and withthe active pads of the re-distribution layer attached to the floor ofthe recess of the dielectric layer by an adhesive, wherein the firstsemiconductor device has protruded bumps that extend from selected onesof the active pads of the re-distribution layer through thethrough-holes at the floor; a bottom buildup circuitry under a bottomsurface of the core base, wherein the bottom buildup circuitry iselectrically coupled to the protruded bumps of the first semiconductordevice and is further electrically coupled to the metal posts throughmetallized vias that extend through the dielectric layer; and a secondsemiconductor device over a top surface of the core base, wherein thesecond semiconductor device is electrically coupled to the firstsemiconductor device through the metal posts and the bottom buildupcircuitry.
 7. The package-on-package semiconductor assembly of claim 6,further comprising a top buildup circuitry over the top surface of thecore base and between the core base and the second semiconductor device,wherein the second semiconductor device is electrically coupled to thetop buildup circuitry, and the top buildup circuitry is electricallycoupled to the first semiconductor device through the metal posts andthe bottom buildup circuitry.